| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Change characteristic of the CB-RAM according to the thickness of HfOx Insulator and heat treatment temperature |
| 초록 | Nowadays, DRAM and NAND Flash memory are reaching a limitation of improving low power consumption and high density technology because of a limitation of down scaling technology. On the other hand, ReRAM(Resistive Radom Access Memory) has Comparatively simple structure and the power consumption required to read or write operation in ReRAM is 50 to 100 times lower than Flash memory. So, it is being considered as a next generation memory. In this study, we have tried to increase the life and reliability of the device through the heat treatment process of CB-RAM(Conductive Bridge Radom Access Memory). Also, we observed I-V characteristics, Endurance and Retention characteristics of the device in accordance with heat treatment temperature. And we have tried to implement the memory MLC(Multi Level Cell) by analysing the I-V characteristics of the device in accordance with change of the HfOx Insulator thickness and CCL(Current Compliance Level). The heat treatment device was manufactured by depositing HfOx onto a substrate having Nano hole pattern size of 250nm, Then heat the device using RF Magnetron sputter and deposited a CuTe thickness of 150nm using same sputter by a mask size of 300um. Pt was used for bottom electrode. Using CBRAM device, we fixed CCL(Current Compliance Level) to 1mA, and confirmed I-V characteristic of Device by changing the thickness of HfOx to 5nm, 10nm, 15nm. As a result, in case of having HfOx thickness of 10nm, the margin of LRS(Low Resistance State) compared HRS(High Resistance State) was the biggest. Also, we fixed HfOx thickness to 10nm, and confirmed I-V characteristic of Device by changing the CCL to 10mA, 1mA, 0.1mA. As a result, the thicker the thickness of HfOx, the bigger margin of LRS compared HRS. And we treat the device having 10nm HfOx by heating and changing temperature to 200, 400, 600℃, and confirmed that endurance and I-V characteristic of heat treatment Device was more stable than no treating by heating. |
| 저자 | Kyung Pil Jung, Seung Hun Lee, Jea-gun Park |
| 소속 | 한양대 |
| 키워드 | CBRAM; HfO<SUB>x</SUB>; Heat treatment device; CCL; endurance; I-V characteristic; Retention. |
