| 초록 |
We have created a large-area field emitter composed of a velvet structure created by tying carbon nanotube(CNT) yarn to a conductive substrate then cutting the yarn, which was prepared by direct spinning through CVD. The structure is arrayed to induce the tips of the CNT yarn to protrude toward the anode for enhanced electron emission. The turn-on field, threshold field, and field enhancement factor of the device are 0.33V/µm, 0.48V/µm, and 19141, respectively. Extremely low operating electric fields and a high field enhancement factor result from the high density of CNT emitters with high crystallinity, the electrically good contact between the emitters and the substrate, and the effects of the multistage structure. The emission is stable even at a high current density of 2.12mA/cm2, attributed to strong adhesion between the emitters and substrate. These results are relevant for practical applicable to large-area flat-panel displays, large-area low-voltage lamps, and x-ray sources. |
