| 초록 |
Traditional OTFTs often suffer from high operating voltage due to the low charge carrier mobility of organic semiconductors and low dielectric property of the gate dielectric, for the applications that require high current output, one way to overcome this problem is to use high-dielectric constant(high-k) gate insulators. However, high-k materials require high annealing temperature or vapor deposition to ensure low leakage current. To address the above issues, a new cross-linked blend hybrid dielectric materials deposited via a solution-phase process have been studied, which affords high gate capacitances, low leakage current densities and smooth surfaces when integrated into TFT structures. |
