| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 에너지 환경재료 |
| 제목 | Electronic Transport Properties of Sn-doped CoSb3 Prepared by Encapsulated Induction Melting |
| 초록 | CoSb3 belongs to the skutterudite structure and it is expected to be a promising thermoelectric material [1]. The substitution of Co or Sb by dopants can influence the electronic structure and electrical properties, in particular substantial change of the carrier masses. Furthermore, it can be expected that doping can affect the lattice thermal conductivity due to enhanced phonon scattering on impurities [2]. In this study, the encapsulated induction melting was attempted to prepare the Sn-doped CoSb3 skutterudites (CoSb3-ySny) and their thermoelectric and electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the encapsulated induction melting and subsequent heat treatment at 773K for 24h. When y is larger than 0.4, δ-CoSb3 was decomposed to γ-CoSb2, indicating the maximum solubility limit of Sn to Sb is y=0.3. Sn atoms acted as electron acceptors by substituting antimony atoms. Thermoelectric properties were remarkably improved by the appropriate heat treatment and Sn doping. Acknowledgments: This work was supported by the Regional Innovation Center (RIC) Program conducted by the Ministry of Commerce, Industry and Energy of Korean Government. [1] J.W. Sharp, E.C. Jones, R.K. Williams, P.M. Martin, B.C. Sales, J. Appl. Phys. 78 (1995) 1013. [2] K.T. Wojciechowski, J. Tobola, J. Leszczynski, J. Alloys & Comp. 361 (2003) 19. |
| 저자 | Kwan-Ho Park1, Soon-Chul Ur2, Il-Ho Kim1 |
| 소속 | 1Department of Materials Science and Engineering/ReSEM, 2Chungju National Univ. |
| 키워드 | Thermoelectric; Skutterudite |
