| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 에너지 환경재료 |
| 제목 | Electronic Transport Properties of Ni-doped CoSb3 Prepared by Encapsulated Induction Melting |
| 초록 | Encapsulated induction melting was employed to prepare the Ni-doped CoSb3 skutterudites (Co1-xNixSb3) [1,2] and their thermoelectric and electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent heat treatment at 773K for 24 hours in vacuum. However, δ-CoSb3 was decomposed to NiSb2 and Sb when x＞0.1, which means that the solubility limit of Ni to Co is x=0.1. The negative signs of Seebeck coefficients for all Ni-doped specimens revealed that Ni atoms acted as n-type dopants by substituting Co atoms. Electrical resistivity and thermal conductivity decreased with increasing the Ni doping level. ZT was considerably enhanced by the Ni doping, and optimum composition was found as Co0.9Ni0.1Sb3 for the Ni-doped CoSb3 prepared by encapsulated induction melting. Acknowledgments: This work was supported by the Regional Innovation Center (RIC) Program conducted by the Ministry of Commerce, Industry and Energy of Korean Government. [1] K. Matsubara, T. Sakakibara, Y. Notohara, H. Anno, H. Shimuzu, T. Koyanagi, Proc. 15th ICT (1996) 96. [2] S. Katsuyama, M. Watanabe, M. Kuroki, T. Maehata, M. Ito, J. Appl. Phys. 93 (2003) 2758. |
| 저자 | Mi-Jung Kim1, Soon-Chul Ur2, Il-Ho Kim1 |
| 소속 | 1Department of Materials Science and Engineering/ReSEM, 2Chungju National Univ. |
| 키워드 | Thermoelectric; Skutterudite |
