| 초록 |
Oxide semiconductors have been extensively studied owing to their unique advantages, such as high charge carrier mobility, excellent optical transparency, and low fabrication cost. High performance oxide thin film transistors (TFTs) demand the gate dielectric materials with high dielectric constant and insulating properties that can reduce the off current and thereby the energy consumption of the TFTs. To improve the dielectric properties, we develop the organic-inorganic PMMA-ZrO2 hybrid material using cross-linking with azide for dielectric layer. As-fabricated devices achieved low operation voltage, with high electron mobility, high on/off current ratio, and low subthreshold swing. This study shows that organic-inorganic hybrid dielectric can be an effective methodology to achieve high performance oxide TFTs. |
