| 학회 | 한국화학공학회 |
| 학술대회 | 2019년 가을 (10/23 ~ 10/25, 대전컨벤션센터) |
| 권호 | 25권 2호, p.1612 |
| 발표분야 | 에너지 환경 (Energy and Environment) |
| 제목 | Solution Based Synthesis of Copper Bismuth Oxide and NiO Hole Transport Layer |
| 초록 | Copper bismuth oxide (CBO) is a p-type semiconductor material which has 1.8eV band gap and 19.7mA/cm2 of theoretical photocurrent density. The p-type Conductivity comes from the copper vacancy states near the valence band edge. CBO fulfills several requirements for the photoelectrochemical water splitting photocatalyst, 1) proper band gap (1.8eV) 2) appropriate band alignment for hydrogen reduction and 3) earth abundant and low cost of fabrication. But CBO has poor charge transfer activity, slow kinetics and photocorrosion caused by trapping of photoelectrons in the Cu 3d band. To overcome disadvantages, 1) optimizing the synthesis method, 2) improve charge transfer activity by using dopant or junction, and 3) passivation layer for stability are required. Nickel Oxide (NiO) is a wide-band gap p-type material which has been used as hole transport layer (HTL) in various semiconductor devices. NiO underlayer can act as effiective hole selective back contact for CBO and FTO interfaces. In this study, CBO and NiO underlayer were synthesized with solution based method and improved photocurrent density was observed. |
| 저자 | 김지혜, 이재성 |
| 소속 | UNIST |
| 키워드 | 에너지 환경 |
| 원문파일 | 초록 보기 |
