| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
E. Structural Materials and Processing Technology(구조재료 및 공정기술) |
| 제목 |
Photoluminescience properties for ZnO: Li layers post annealed in the Zn - ambient, O, and vacuum |
| 초록 |
ZnO: Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO: Li sintered pellet was irradiated by the ArF (193nm) excimer laser. The growth temperature was fixed at 400 oC. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). After the as-grown ZnO: Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO: Li has been investigated by PL at 10 K. The peaks of native defects of VZn, VO, Znint, and Oint showned on PL spectrum are classified as a donors or acceptors type. We confirm that ZnO: Li/Al2O3 in vacuum do not form the native defects because ZnO: Li epilayers in vacuum existe in the form of stable bonds. |
| 저자 |
Kwangjoon Hong |
| 소속 |
Department of physics Chosun Univ. |
| 키워드 |
pulesd laser deposition (PLD); ZnO: Li epilayer; photoluminescence; native defects
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| E-Mail |
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