| 초록 |
In this study, we synthesized ZnSeTe/ZnSe/ZnS alloy quantum dots and treated a surface condition by zinc halide and analyzed their quantum dot light-emitting diodes (QLEDs). Zinc halide treated ZnSeTe QDs (ZnSeTe-X) was confirmed by TGA and FT-IR analysis. The photoluminescence spectra and TEM image show that the emission wavelength (453 nm), FWHM (27 nm), and size (5.1 nm) of the QDs is not varied after treatment, but PLQY was increased (53% to average 75-80%). QLEDs devices were fabricated using ZnSeTe-X QDs and significant improvements in the device electronic performance were observed. The halide treatment was show sufficiently modifying surface condition of ZnSeTe QDs. Among the halides, Cl treatment shows the best performance effect. The best performance of QLEDs showed emission peak at 456 nm, maximum current density (1142 mA/cm2), luminance (4515 cd/m2), external quantum efficiency (3.26 %), and current efficiency (3.63 cd/A). |
