| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Fiber-GeS2-Fiber Structure OTS Device for Wearable ReRAM Devices |
| 초록 | In recent years, wearable device technology is growing at a rapid pace as attention is focused. Accordingly, various researches related to wearable devices are being conducted. Memory devices are also being studied in relation to bending and stretching stability so that they can be used in wearable devices. Resistive Random Access memory (ReRAM), which is in the spotlight as a next-generation memory device, can deviate from the existing memory device structures because it operates with a simple Metal-Insulator-Metal (MIM) structure. This allows for the creation of highly flexible wearable memories that break through the flexibility limitations in traditional memory device structures. However, when using ReRAM as a cross-bar structure in wearable device, disadvantages such as sneak current appear. Herein, we fabricated the Ovonic Threshold Switching (OTS), which can solve the sneak current problem of cross-bar structure ReRAM, with conductive stretchable fiber for metal layer. We deposited the GeS2 as OTS insulator layer by RF sputtering on the fiber coated with uniform Ag nanoparticles developed by our research team. The thickness of GeS2 was controlled by the deposition time, and GeS2 of the same thickness have the same Vth. Through further research, it is expected that by making ReRAM and OTS structure on the fiber, the memory device that is very stable for bending and stretching can be realized and used in wearable devices. |
| 저자 | Donghun Shim, Taeyoon Lee |
| 소속 | Yonsei Univ. |
| 키워드 | Resistive Random Access Memory; Ovonic Threshold Switching; Wearable electronics |
