| 학회 |
한국화학공학회 |
| 학술대회 |
2021년 봄 (04/21 ~ 04/23, 부산 BEXCO) |
| 권호 |
27권 1호, p.1059 |
| 발표분야 |
촉매 및 반응공학 |
| 제목 |
Solution etching of bulk graphitic carbon nitride and their Hydrogen evolution performance |
| 초록 |
Recently graphitic carbon nitride (g-C3N4) has received enormous attention in the photocatalysis area as a metal-free semiconductor photocatalyst. In this study, solution-etched g-C3N4 was successively prepared through a solvothermal treatment of bulk g-C3N4 and applied for hydrogen evolution tests. The different solvent ratios of water to ethanol were chosen as a variable to modify bulk g-C3N4. The solvothermal process results in the generation of hydroxyl groups, O substitution in the C-N framework, and carbon vacancies which are responsible for the modulation of g-C3N4 and an increase in hydrogen evolution performance. At the same time, the hydroxyl groups as a hydrophilic functional group can open ends or defect sites of the bulk g-C3N4 structure to enhance the dispersion and specific surface area of g-C3N4. Comparing with the bulk g-C3N4, the obtained solution-etched g-C3N4 showed excellent solution dispersion stability, great photogenerated charge carrier separation and transfer, and high surface area. The photocatalytic activities of the solution-etched g-C3N4 named as Pt/CN50 (C2H5OH: H2O = 50:50 V%) towards hydrogen evolution was highest among all samples. |
| 저자 |
Dao Duc Quang, 웬티킴안, 왕명연, 김상윤, 신은우
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| 소속 |
Univ. of Ulsan |
| 키워드 |
촉매 |
| E-Mail |
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| 원문파일 |
초록 보기 |
