| 초록 |
Graphene is an attractive material that has the outstanding mechanical, electrical and optical properties. Graphene have been prepared by several techniques including the Scotch tape (peel-off) method, epitaxial growth on SiC, chemical vapor deposition (CVD) and exfoliation of graphite oxide. However, those methods are not optimized for the mass product of high-quality graphene. Hence, solvothermal synthesis could be an alternative option for the large-scale production of graphene, which is produced by Wurtz reaction between tetrachloride methane and potassium. By incorporation of heteroatom containing impurities as doping agents, n- and/or p-doped graphene could be prepared. We will present the relationship of doping levels and electrochemical properties. |
