| 초록 |
Cu2SnS3(CTS) is one of the interesting absorber compound owing to the presence of earth-abundant and nontoxic elements. In the present work, Cu2SnS3(CTS) thin film solar cells have been fabricated using sputtered deposited Cu/Sn metallic precursors on Mo-coated soda lime glass(Mo-SLG) substrate. The metallic precursor thin films are sulfurized in a graphite box containing S powder using rapid thermal annealing (RTA) furnace. The influence of varied sulfurization parameter (pressure 300~500torr) on the CTS thin film properties and its solar cell performance are studied. The morphological, structural and electrical properties of the CTS absorber layer are studied using field-emission transmission electron microscopy (FE-TEM), Fluorescence Spectrometer (XRF), X-ray diffraction (XRD) and J-V. The best power conversion efficiency of 2.80 % with a short circuit current density of 28.1 mA/cm2, an open circuit voltage of 207.5mV, and fill factor of 48% is obtained. |
