| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Growth and Characterization of Bulk GaN Single Crystals Grown by Basic Ammonothermal Method |
| 초록 | Gallium nitride (GaN) substrates of high-quality and large-size single crystal are needed to improve on optoelectronic and electronic devices currently grown on foreign substrates such as sapphire, silicon or SiC. The use of non-native substrates results in high dislocation densities (＞109/cm2) and efficiency degradation. Therefore, methods of producing single crystals of high-quality and large-size that would enable successful commercialization have been a major focus for research groups. In recent years, the ammonothermal growth technique has attracted interest as a potential route to achieve large-scale synthesis of bulk GaN single crystals1-2. Ammonothermal method is the analogue of hydrothermal method using super critical ammonia as the solvent instead of water. The ammonothermal growth of bulk GaN could be a cost effective method for the manufacture of GaN substrates3. Bulk GaN crystals were grown by the basic ammonothermal growth. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. We figured out the changes of the growth rate and morphology for the Ga-face, N-face, and m-plane according to pressures and dissolution zone and growth zone temperatures. The growth rate for the c-axis was increased with increasing the operating pressure. Also, we investigated the growth and characterization of ammonothermal grown GaN crystals using potassium metal and amide mineralizers. REFERENCES 1. R. Dwiliński, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kucharski, M. Zając, M. Rudziński, R. Kudrawiec, J. Serafińczuk, W. Strupiński, J. Cryst. Growth 312, 2499 (2010). 2. B. Wang, D. Bliss, M. Suscavage, S. Swider, R. Lancto, C. Lynch, D. Weyburne, T. Li, F. A. Ponce, J. Cryst. Growth 318, 1030 (2011). 3. R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, M. Palczewska, A. Wysmolek, M. Kaminska, MRS Internet J. Nitride Semicond. Res. 3, 25 (1998). |
| 저자 | Jang Bo Shim, Young Kuk Lee |
| 소속 | Korea Research Institute of Chemical Technology |
| 키워드 | GaN; supercritical ammonia; ammonothermal method; single crystal |
