| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | High on–off ratio, large area CVD-grown graphene phototransistors |
| 초록 | Two-dimensional materials have attracted strong interest for their fascinating electronic properties and have shown many advantages in optoelectronic applications. Among two-dimensional materials, graphene has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to light absorption in broad wavelength range and their ultrahigh carrier mobility. However, graphene’s semimetallic nature would give rise to a large dark current (up to 50–100 uA) and low on–off ratio (less than 2). Here, we demonstrate a new method to enhance the on-off ratio of graphene photodetector with metal-graphene-metal structure. In this phototransistor, an asymmetric metal contact (Titanium and Platinum) design is adopted to provide a strong internal electric-field in the phototransistor channel. Optical microscopy, Raman spectroscopy and atomic force microscopy (AFM) were used to determine optimal etching conditions and observe residues after thermal treatment. The device offers a high on-off, a broad spectral bandwidth and compatibility with CMOS technologies. |
| 저자 | Jungsang Lee1, Jaehyeon In2, Hyunsu Ju1, Sangsig Kim2, Jeonkook Lee1 |
| 소속 | 1KIST, 2Korea Univ. |
| 키워드 | CVD graphene; on–off ratio; large area |
