| 학회 |
한국공업화학회 |
| 학술대회 |
2016년 가을 (10/26 ~ 10/28, 제주국제컨벤션센터(ICCJEJU)) |
| 권호 |
20권 2호 |
| 발표분야 |
에너지저장변환_포스터 |
| 제목 |
Unprecedented Method of Epitaxy Silicon Growth at 200 °C using Very High Frequency Plasma Enhanced Vapor Phase Epitaxy |
| 초록 |
We present our recent research on fabrication of high-quality ultrathin monocrystalline silicon layers at low substrate temperature of 200 °C. In this work, we demonstrate a novel low-temperature process for growth of ultrathin silicon wafers. Application of plasma excitation on vapor phase epitaxy process enables to grow high-quality epitaxial silicon layers from SiH4/H2 gas mixtures at 200 °C. In order to achieve high-rate growth of the epitaxy silicon, growth of epitaxy silicon by using very high frequency (VHF) plasma has been studied. It was found that the plasma uniformity strongly depends on power-feed configurations of the VHF power. Potential distributions on power-feed configurations were studied and the plasma uniformity is improved. As a result, we demonstrate uniform growth over large area (100 cm2) of low temperature epitaxy silicon at high rate growth of 10 Å/s |
| 저자 |
김가현1, 홍지은1, 김남우2, 윤현1, 조임현1, 서관용2, 김동석1
|
| 소속 |
1한국에너지기술(연), 2울산과학기술원 |
| 키워드 |
Kerfless wafer; Epitaxy
|
| E-Mail |
|
