| 초록 |
Nickel oxide (NiO) is commonly used as a hole transport layer (HTL) in inverted-structure (p-i-n) planar perovskite solar cells (PSCs), considered to have a key role in the device performance. Here, we report a high-quality hole transport material deposited by solution-processed vanadium (V) substituted NiO nanomaterial at roow-temperature. The incorporation of V into the NiO lattice enhanced the Ni3+/Ni2+ ratio, resulting in an increase in electrical conductivity. The smaller size of V substituted NiO than that of pristine NiO, decreased the surface roughness and significantly enhanced the surface wetting properties of the perovskite film. Furthermore, the presence of V5+ effectively enhanced the electrical conductivity of the NiO film as determined from the photovoltaic properties of the single cell inverted PSC. These enhanced performances, stability and room-temperature deposition methods validate the feasibility of the V-incorporated NiO for flexible PSC modules with promising performance. |
