| 학회 |
한국화학공학회 |
| 학술대회 |
2010년 가을 (10/21 ~ 10/22, 대전컨벤션센터) |
| 권호 |
16권 2호, p.1481 |
| 발표분야 |
분리기술 |
| 제목 |
Post Ion Implanted Photoresist Stripping Using Supercritical Carbon Dioxide |
| 초록 |
High does ion implanted photoresit(HDIPR) was stripped off from the surface of semiconductor wafers using supercritical carbon dioxide(SCCO2) and additives Fluorinated srfactants and alcohols were add to enhance the solvation effect. We investigated different surfactant concentrations, stripping temperatures and pressure, and magnetic stirring and their impact on the process efficiency. The wafer surface was analyzed before and after stripping by scanning microscopy and by energy dispersive X-ray spectrometer. The result indicate that HDIPR could be stripped completely in 30 min using a Surfactant+co solvent mixture at 20Mpa and 343K. |
| 저자 |
김민성, 임종성, 유기풍
|
| 소속 |
서강대 |
| 키워드 |
SCORR; Ion Implanted wafer; Photoresist
|
| E-Mail |
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| 원문파일 |
초록 보기 |
