| 초록 |
Detection of light has become one of the key technologies in various applications including robots, biomedical systems, etc. Most IR detectors have been fabricated with inorganic materials that are basically rigid. In this regard, organic materials can be applied for the detection of IR light because of their high flexibility compared to inorganic materials. However, organic materials that are able to absorb IR light could not be easily obtained because very low band gap features are required for the IR detection. Recently, our group has demonstrated that organic phototransistors with novel conjugated polymers are capable of detecting near infrared (NIR) light. This breakthrough could be achieved by making new device concept of gate-sensing layer (GSL). This presentation uncovers our next attempt to detect short-wavelength infrared (SWIR) by fabricating brand-new SWIR organic phototransistors of which sensing layer is composed of Lewis acid-doped polyarylamines. |
