| 학회 |
한국재료학회 |
| 학술대회 |
2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 |
19권 2호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Zinc-tin-oxide Buffer Layers Grown by Atomic Layer Deposition for Cu2O Thin-film Solar Cells |
| 초록 |
There are several methods to form thin-films and atomic layer deposition (ALD) is one of the most promising techniques highlighted recently, allowing one to obtain highly conformal films on planar and three-dimensional structures. In this talk, I will introduce the ALD technique and discuss the formation of zinc-tin-oxide buffer layer using diethylzinc and a newly synthesized tin(II) precursor for zinc and tin precursors. Cuprous oxide (Cu2O) is one of the p-type absorber materials under consideration with the potential to reach 20% power conversion efficiency in thin-film solar cells. Zinc oxide has been demonstrated to show the best match with Cu2O as an n-type buffer layer, but its record efficiency still remains low ( |
| 저자 |
허재영 |
| 소속 |
전남대 |
| 키워드 |
atomic layer deposition; n-type semiconductor; solar cells
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| E-Mail |
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