| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 |
Microstructure characterization of poly-Si film formed using HWCVD on a VIC processed poly-Si seed layer |
| 초록 |
We investigated the epitaxial growth of large-grained polycrystalline Si film on vapor induced crystallization (VIC) seed layer using hot-wire chemical vapor deposition(HWCVD) for hetero-junction Si solar cells. The epitaxial poly-Si layer on VIC seed layer has highly (111) preferred orientation similar to VIC seed layer. Furthermore, it was found that the crystallinity and crystallographic properties of the poly-Si film were improved. Average grain size of about 20㎛, are obtained and the crystallographic defects in epitaxial poly-Si layer on VIC seed layer are mainly low angle grain boundaries (LAGB < 2°) and coincident site lattice boundaries (CSL), which are special boundaries of less electrical activity. Therefore, it seems that the poly-Si film with an epitaxial layer on VIC seed layer will be good for device characteristics even though it has grain boundary. |
| 저자 |
강승모, 안경민, 문선홍, 안병태
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| 소속 |
KAIST 신소재공학과 |
| 키워드 |
Si solar cell; HWCVD; Epitaxial growth
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| E-Mail |
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