| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
B. Nanomaterials and Processing Technology(나노소재기술) |
| 제목 |
Effect of the ELOG GaN using carbonized mask |
| 초록 |
Several approaches involving mask-less or single-step ELOG processes have been investigated. In this research, we report on a single-step ELOG process using an in-situ carbonized PR mask on the sapphire substrate. The overgrowth is initiated in conditions that lead to smooth sidewalls, after which the growth parameters are altered to increase the lateral growth rate. We show that the stripe morphology is essentially determined by the growth conditions of the first overgrowth step, which greatly extends the range of conditions under which smooth ELOG stripes can be achieved. Mask materials used in the conventional ELOG process, such as SixNy or SiO2, are potential sources of impurities and can induce strain in the epilayer. However, reduced dislocation density was obtained from the ELOG GaN layer, which is consistent with the result of our previous work. Therefore, This method enhanced the optical and crystal properties in epitaxial growth in LED. The ELOG GAN layer was analyzed by the XRD in order to estimate the crystal orientation. The structural and optical properties of the GaN layers were characterized using SEM, PL and CL. |
| 저자 |
홍정엽, 김상일, 장삼석, 권준혁, 문성욱, 변동진
|
| 소속 |
고려대 |
| 키워드 |
ELOG; MOCVD; PR Mask
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| E-Mail |
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