| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 봄 (04/08 ~ 04/09, 대전컨벤션센터) |
| 권호 |
35권 1호 |
| 발표분야 |
분자전자 소재 및 소자(분자전자 부문위원회) |
| 제목 |
Development of organic field effect transistor nonvolatile memory |
| 초록 |
In this presentation, I will give an overview of organic nonvolatile memory devices which have been recently developed by our group. Our memory devices have a typical geometry for organic field effect transistors with various chargeable gate dielectric film including polymer electrets, metal nanoparticle imbedded polymer insulators or fullerene (C60): polymer nanocomposited films. The chargeable gate dielectrics enable the reverse shift of threshold voltage and a long retention time of high and low current state after a certain gate bias for a programming and erasing. Our typical memory device showed the large threshold voltage shift over 20 V and the long retention time more than 10 hrs. The characteristics of memory devices strongly depended on a type and basic properties of the chargeable dielectric film. Details will be discussed in the presentation. |
| 저자 |
노용영1, 백강준2, 김동유3
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| 소속 |
1한밭대, 2광주과학기술원, 3신소재공학과 / ETRI |
| 키워드 |
organic field effect transistors; organic nonvolatile memory
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| E-Mail |
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