| 초록 |
A thermoelectric figure of merit ZT has been mainly focused to improve by reducing thermal conductivity, resulting record high performance in several significant thermoelectric (TE) systems. Contrary to thermal conductivity that rapidly approaches to the amorphous limit, power factor (PF) does not have the theoretical upper bound, and it directly defines the output power density of TE devices. However, it is still challenging to enhance PF for Bi2Te3 -based materials that are representative TE materials at room temperature. Here we report ultrahigh power factor and carrier mobility in new n-type Bi2Te3-based material through Cu incorporating under excess Te condition. It exhibits markedly high carrier mobility and electrical conductivity that increase with the higher Cu amount, which enhances its power factor. |
