| 초록 |
Titanium oxide, TiO2, films have various applications for photocatalysts, anti-reflection coatings for optical devices, sensors, dielectric layers in microelectronic devices, and a component of the ferroelectric oxides like Pb(Zr, Ti)O3 for infrared detectors and nonvolatile memory devices, etc. Metal organic chemical vapor deposition (MOCVD) is one of excellent deposition techniques to fabricate high-quality films because of the thickness uniformity over large-area substrates, control of interfaces, film homogeneity, accurate stoichiometry control, and excellent conformal step coverage on non-planar substrate structure. In CVD process, the availability of precursors with appropriate physical and chemical properties is essentially important problem with the development of optimal deposition process. In this work, newly developed titanium alkoxide precursor, Ti(mp)4 (Ti[OC(CH3)(C2H5)2]4, mp = 3-methyl-3-pentoxide), was employed to grow TiO2 films on Si(001) substrates by single source CVD and the decomposition mechanism was also investigated. The reaction mechanism was clearly identified by gas chromatography/mass spectroscopy and 1H nuclear magnetic resonance analyses of its thermal decomposed products. The morphology, crystallinity, and electrical properties of the TiO2 films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage and current-voltage measurements. |
