| 학회 |
한국재료학회 |
| 학술대회 |
2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 |
18권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Investigation free exciton emission energy on the PL spectra of CdS/GaAs epilayers |
| 초록 |
The hexagonal-structured CdS/GaAs epilayers were grown by the hot-wall epitaxy method. The optical properties attributed to the thermal quenching phenomenon of CdS were studied through photoluminescence (PL) measurement as a function of temperature. With increasing temperature, PL intensities of free excitons were exponentially reduced and their spectral width showed a tendency to broaden. This tendency is related to the phonons generated by the lattice vibration of the host material in CdS. These findings led us to conclude that the phonons may be participating in the quenching process. Also, the temperature dependence of the band gap energy on CdS was well interpreted by Eg(T) = 2.5684 – (5.4x10-4)T2/(258.8+T). |
| 저자 |
홍광준 |
| 소속 |
조선대 |
| 키워드 |
CdS/GaAs epilayer; exciton-phonon; photoluminescence; free excitons
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| E-Mail |
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