| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Electrical characterization of interface and bulk traps in Metal-Oxide-Semiconductor Field Effect Transistors with hafnium based dielectric |
| 초록 |
Effects of interface and bulk traps on device performance and reliability of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were studied using high frequency characterization techniques. Charge pumping method and single pulse technique were adopted to enable quantitative separation of interface and bulk traps in MOSFETs with hafnium based dielectric. HfO2 and HfSiO dielectric grown by atomic layer deposition (ALD) were compared to investigate compositional effect on trap generation and device characteristics. The results indicate that MOSFET with HfSiO dielectric has better interface quality and less bulk traps compared to HfO2 dielectric. Consequently, high carrier mobility and stable threshold voltage (Vt) stability under bias and temperature stress was achieved using HfSiO dielectric |
| 저자 |
Tea Wan Kim, Rino Choi, Tae Young Jang
|
| 소속 |
인하대 |
| 키워드 |
interface trap; charge trap; carrier mobility; BTI; high-k dielectric
|
| E-Mail |
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