| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 가을 (10/06 ~ 10/08, 대구컨벤션센터(EXCO)) |
| 권호 |
40권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Fabrication of n-Type Field Effect Transistors Based on a C60 Derivative with Triphenylamine Group |
| 초록 |
Along with other commercially available n-type semiconductor materials, phenyl-C61-butyric-acid methyl ester (PC61BM) has been in the limelight for a long time because of its great solubility in common organic solvents and adequate electron-transporting characteristics. Hence, many research groups have reported various devices based on PC61BM such as photovoltaic cells, photodetectors, and field-effect transistors. However, attention to other C60 derivatives was lacking. In this work, we fabricated field-effect transistors based on a donor-acceptor structured C60 derivative with triphenylamine group. Thin films of N-alkyl-2-(4-triphenylamine) fulleropyrrolidine thin film were applied as the electron-transporting layer. We employed various dielectric layers, and studied their effects on the charge transport properties. |
| 저자 |
김선주1, 김낙중2, 최종완2, 송희석1, 김기명1
|
| 소속 |
1중앙대, 2한양대 |
| 키워드 |
Field-Effect Transistor; n-Type; C60; Fullerene
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| E-Mail |
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