| 초록 |
ZnO with wurtzite structure have a wide band gap of 3.37 eV. Because ZnO has a direct band gap and large exciton binding energy, it has higher optical efficiency and thermal stability than GaN of the blue light emitting device. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted to fabricate stable p-type ZnO up to date. In this study, As+ ion was implanted by ion implanter to fabricate p-type ZnO. After ion implant, rapid thermal annealing (RTA) was conducted to activate arsenic dopants. Firstly, the structural and optical properties of ZnO thin films were investigated as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. And then the structural, optical, and electrical properties of ZnO thin films depending on As ion dose variation and RTA temperatures were analyzed same methods. In our experiment, p-type ZnO thin films with a hole concentration of 1.263 × 1018 cm-3 was obtained when the dose of 5 × 1014 As ions/cm2 was implanted and the RTA was conducted at 850 °C for 1 min. |
