| 초록 |
Block copolymer (BCP) lithography has emerged as a fascinating alternative in the field of nanoscience to overcome the issues of top-down approaches. For the integration of BCP lithography, one of the important issues is the etching properties of the blocks for subsequent pattern transfer. Organic-inorganic BCPs have large differences in etch resistance between blocks. The removal of organic block leaves a structure made from inorganic block, which could be used as a robust oxide etch mask. Consequently, it can greatly reduce the complexity of the process for pattern transfer into underlying materials. In this study, we directly incorporated monomers containing silicon moieties into the block during anionic polymerization. Solvent vapor annealing controls the orientation of PS cylinders embedded in the matrix of silicon block. Perpendicular or parallel PS cylinders were removed by oxygen plasma etching, which leaved organosilicate nanostructure without deformation of the ordering. |
