| 초록 |
Compared to bottom-gate OFETs, top-gate OFETs have been less widely used due to their difficulties in depositing gate dielectrics using solution processes without harming the underlying organic semiconductors. In this study, we developed solventless processible and direct photo-patternable gate dielectric system. Viscous liquid of a mercapto-functionalized poly[(mercaptopropyl)methylsiloxane] and alkene-containing molecule were spin-coated along with a photo-initiator, and cured by thiol-ene reaction through UV irradiation at 365 nm. The dielectric constant and leakage current of the dielectric film were measured via device fabrication of capacitor, showing good electrical properties as a gate dielectric. The solventless processible gate dielectric system can be successfully applied to the top-gate OFETs using both small molecule and polymer semiconductor. Pattern replication was also successfully demonstrated through conventional photolithographic methods. |
