화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2004년 가을 (10/08 ~ 10/09, 경북대학교)
권호 29권 2호, p.728
발표분야 분자전자 부문위원회
제목 Device characteristics of field effect transistors using doped polypyrrole as active layer
초록 Recently many attention have been focused to organic semiconducting materials and organic field effect transistor(FET). In this study, p-type, dope polypyrroles were synthesized using functional dopants, dodecylbenzenesulfonic acid(DBSA), di(2-ethylhexyl)sulfosuccinate sodium salt(DEHSNa). And FET device were fabricated by spin coating using these materials as active layer. Polymethylmethacrylate(PMMA), Polyvinylphenol(PVP) were used as insulating materials. Device characteristics such as field effect mobility, ION/IOFF ratio will be discussed.
저자 정유정1, 오응주1, 김영호2
소속 1명지대, 2수원대
키워드 organic field effect transistor; polypyrrole
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