| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 가을 (10/08 ~ 10/09, 광주과학기술원 오룡관) |
| 권호 |
34권 2호 |
| 발표분야 |
OLED 소재 및 소자기술 동향(분자전자 부문위원회) |
| 제목 |
Development of high performance inkjet printed polymer transistors and circuits for application of printed RFID |
| 초록 |
Printing is an emerging approach for low-cost, large-area manufacturing of electronic circuits, but it suffers from a low charge carrier mobility resulting in slow circuit speed. We demonstrate here high performance inkjet printed p-channel and n-channel polymer transistors and complementary inverter circuits. Our printed p-channel and n-channel transistors showed very good balance in transistor characteristics, e.g., charge carrier mobility. The both top-gated p-type and n-type transistors showed mobility as high as 0. 1 ~ 0.4 cm2/Vs with pretty good air stability. We have developed inkjet printed complementary inverter and advanced circuits with those transistors and main results will be discussed in presentation. In addition, I will introduce recently developed top gated nonvolatile polymer transistor memory device with metal nanoparticle imbedded bilayer polymer gate dielectrics. |
| 저자 |
노용영 |
| 소속 |
한국전자통신(연) |
| 키워드 |
Organic thin film transisotor; ink jet printing
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| E-Mail |
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