| 초록 |
After IBM, one of the major electronic manufacturers of integrated circuits (ICs) switched from aluminum conductors produced by physical methods (evaporation) to copper conductors manufactured by electrochemical methods (electrodeposition), the copper interconnection technology by the electrochemical process (electrodeposition) became one of the key technologies in the microelectronic industry. Electrodeposited magnetic thin films of the iron-group metals (Fe, Co and Ni) have been developed because of potential applications in ultra large scale integration (ULSI), computer read/write heads and microelectromechanical systems (MEMS). Specially, magnetic-MEMS devices such as magnetic recording heads, magnetometers, microactuators, micromotors, and frictionless microgears require the use of both hard and soft magnetic materials. Film stress is an important factor for MEMS devices because, unlike in the data storage application, the thickness of magnetic films in MEMS can range from nanometers (e.g. NEMS devices) to few millimeters thick (e.g. high aspect ratio microstructures using LIGA and SU-8 processes). In many cases, this film stress could exceed the strength of the film, resulting in cracking, deformation of devices, and interfacial failure. Therefore, it is very important to develop high performance soft magnetic materials with minimum film stress. In this work, systematic studies of Ni and Ni-based thin film alloys relating their properties with film composition, grain size and the corresponding crystal structure were investigated. The film stress changes of the electrodeposited Ni and Ni-based thin film alloys were studied. The rest of detailed test results will be further discussed. |
