| 초록 |
As semiconductor technology is developed over ULSI, device is getting shrink and multilevel interconnection is required. Therefore many researchers have tried to lower dielectric constant, which is essential property for the intermetal dielectric materials. Most devices today use a SiO2 materials deposited by chemical vapor deposition for their interlayer dielectric. The choice of SiO2 was based on its good dielectric and mechanical strength, as well as the ease of processing. Fluorine doped silicon dioxide (SiOF) films have been investigated to reach a low dielectric constant 3.5 or below. In this study, we have studied the real gas phase species under the same CVD condition and comparatively studied the thermal decomposition of TEOS between low pressure chemical vapor deposition and remote plasma enhanced chemical vapor deposition conditions by in situ FT-IR. F-doped SiO2 film deposition have been doing to get a low dielectric constant with PECVD at temperature from 200 to 400 oC. The wafer were cleaned as a modified RCA method. The films are analyzed by SEM and AFM for surface morphology, Ellipsometer for thickness and refractive index, and XPS for contents of the film. |
