| 학회 |
한국공업화학회 |
| 학술대회 |
2015년 봄 (04/29 ~ 05/01, BEXCO (부산)) |
| 권호 |
19권 1호 |
| 발표분야 |
나노_포스터 |
| 제목 |
Proving and tuning of trap sites on the PbS(e) nanocrystal surface using a field effect transistor arrangement. |
| 초록 |
High surface to volume ratio in PbS(e) nanocrystals yields electronic trap sites produces variables, disabling theoretical prediction based on intrinsic properties by capturing mobile carriers in optoelectronic devices. To probe size and ligand dependent trap density, a pentacene/PbS(e) bi-layer field effect transistor and solar cell devices were fabricated. Threshold voltage in the dark is a measure of electronic localized states, allowing for estimation of trap density at a particular bias condition. Schottky-Mott analysis using a diode arrangement in combination with energy level measurements were carried out to correlate the interfacial properties to the electrical diode characteristic curves. It is also demonstrated that the carrier density in the pentacene layer can be tuned by the choice of the underlying NC layer with different size and ligand. |
| 저자 |
김영준, 조성은, 박병남
|
| 소속 |
홍익대 |
| 키워드 |
trap; pentacene; PbS; FET; ligand; nanocrystal
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| E-Mail |
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