| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 가을 (10/07 ~ 10/08, 대구 EXCO) |
| 권호 |
35권 2호 |
| 발표분야 |
분자전자소재 및 소자 |
| 제목 |
High-performance, Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics |
| 초록 |
A high performance low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203±57 and 91±50 cm2/Vs, respectively, at a drain bias of -1V. Moreover, ion gel-gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents asignificant step in the application of graphene to flexible and stretchable electronics. |
| 저자 |
김범준1, 장호욱2, 홍병희2, 안중현2, 조정호1
|
| 소속 |
1숭실대, 2성균관대 |
| 키워드 |
Graphene; ion gel; flexible electronics; field effect transistor; low-voltage operation
|
| E-Mail |
|
