| 초록 |
Surface-enhanced Raman scattering (SERS) is one of the most practical analysis techniques for molecular structure characterization and trace-amount detection. The recent discovery of Raman signal enhancement effect on two-dimensional layered materials has given important information to the origin of Chemical enhancement mechanism (CM), which is driven by charge transfer and dipole-dipole interaction. Two-dimensional semiconductor materials, exhibiting the various electronic properties, could be suitable candidate for fundamental analysis of CM. In this work, we report the SERS effect of MoTe2, MoS2 and WS2 which have various band-gap from 1.1 eV to 2.1 eV at their monolayer states. The different SERS effect for these layered materials suggests that the band gap of 2D materials is one of the dominant factors in the degree of signal enhancement. The systemic observation of CM effect could be helpful in designing of more effective SERS substrates for practical sensing applications. |
