| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 봄 (04/12 ~ 04/13, 제주 ICC) |
| 권호 |
32권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Fabrication of SWNT-TFT using High-Resolution Ink-jet printing |
| 초록 |
We will describe on the electrical properties of TFT that use polymer-coated networks of SWNTs as the semiconductor with source and drain electrodes formed by high-resolution ink-jet printer. TFTs with SWNT have been printed on silicon wafer with channel length of 200um and 3000um of width. The characteristic properties of all inkjet printed SWNT-TFT have 103 of Ion/Ioff ratio and 4.46cm2/Vs of mobility. We will report the input-output characteristics observed using inverter circuit made by SWNT-TFT. Also it has been observed the pulse response for using RFID tag at 13.56MHz. |
| 저자 |
정민훈1, 조규진2, 장세정1, 김재영1, 송재희2
|
| 소속 |
1(주)파루, 2순천대 |
| 키워드 |
ink-jet printing; SWNT-TFT
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| E-Mail |
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