| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
B. Nano materials and processing Technology(나노소재기술) |
| 제목 |
Random Network Transistor Arrays of ZnO Nanorods |
| 초록 |
The large scale synthesis of wide ranging nanostructure has emerged as attractive building blocks for the next generation of electronics. We have presented the fabrication of the arrays of high performance top-gate networked ZnO nanorods (NRs) transistors by utilizing photo-patternable polyelectrolyte dielectrics on a flexible substrate. The extremely high capacitance of the chemically cross-linked polyelectrolyte (~ 18 µF/cm2 at 20 Hz) has allowed both low voltage operation and higher on current. The average field-effect mobility and on/off ratio were ~ 1.63 cm2/Vs and 104, respectively. Electrolyte gate operation provides ohmic characteristics of ZnO/Au contact by strong electrostatic doping, which is due to the significant band bending at ZnO-Au interface. By using these properties, p-type and n-type nanostructures were interconnected for complementary inverter (gain ~12) circuit designs by using only one mask. The morphologies of the ZnO NRs were examined by field emission scanning electron microscopy (SEM) and a high-resolution transmission electron microscope (HRTEM). The electrical characteristics of ZnO NR devices were characterized using the HP-4145B semiconductor parameter analyzer. |
| 저자 |
최지혁, 이성원, 문경주, 강윤희, 전주희, 정운룡, 명재민
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| 소속 |
연세대 |
| 키워드 |
Ion-gel; ZnO; Random network; Aqueous growth; Inverter
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| E-Mail |
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