| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 가을 (10/08 ~ 10/09, 광주과학기술원 오룡관) |
| 권호 |
34권 2호 |
| 발표분야 |
OLED 소재 및 소자기술 동향(분자전자 부문위원회) |
| 제목 |
Low-Temperature Solution Processed ZnO TFT using Ion Gel Gate Dielectrics |
| 초록 |
Solution processed thin-film transistors based on inorganic materials have attracted special attention in the last decade. Especially, ZnO is an inorganic n-type semiconductor which exhibits high mobility, excellent environmental stability, and high transparency. The high capacitance of gel electrolyte serves high field-induced charge carrier densities in TFTs and thus makes it possible to operate at low voltage. In previous works, the gate dielectrics called ion gel have been reported in organic TFTs for low voltage operation. This work has demonstrated the possibility of gating a zinc oxide based TFT using the gel electrolyte dielectrics. Solution-processed ZnO TFT shows excellent electrical properties regardless of low sintering temperature around 300°C. The solution-processable nature of zinc oxide precursor and extremely high capacitance of gel electrolyte dielectrics provide an alternative processing method in the development of large area flexible electronics applications. |
| 저자 |
봉효진1, 조정호2, 이위형1, 임정아1, 곽동훈1, 최현호1, 조길원1
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| 소속 |
1POSTECH, 2숭실대 |
| 키워드 |
ZnO; Ion gel; TFT; FET; Transistor
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| E-Mail |
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