| 학회 |
한국재료학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 |
27권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
High-k gate dielectric properties from hydrocarbon film grown by inductively coupled plasma chemical vapor deposition |
| 초록 |
New high-k gate dielectrics are highly necessary in facilitating the continuous down-scaling of metal-oxide-semiconductor devices to the sub-10 nm range. In this work, ultrathin organic hydrocarbon (HC) film as a novel high-k gate insulator for metal insulator semiconductor (MIS) devices was studied on Si (100) substrate using inductively coupled plasma chemical vapor deposition (ICP-CVD) with a mixture of argon (Ar), hydrogen (H2) and methane (CH4) gases. The dielectric properties of HC film strongly depend on temperature, radio frequency (rf) power, CH4 flow rate and atmospheric pressure. By using the optimized condition, we have obtained a HC film that reached the highest k value of 90 at 300 ℃, 400 W, 10 SCCM and 0.5 Torr. In addition, the MIS devices display great gate-insulating properties, including almost no hysteresis in the capacitance-voltage curve, low leakage current, and high dielectric strength. We elucidate that the organic HC film has excellent dielectric properties and is potential candidates for next-generation high-k gate dielectric material for sub-10nm node Si. |
| 저자 |
Viet Dongquoc1, Dong-Bum Seo2, Tran Nam Trung3, Eui-Tae Kim1
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| 소속 |
1Department of Materials Science and Engineering, 2Chungnam National Univ., 3Republic of Korea |
| 키워드 |
Hydrocarbons; High-k dielectrics; Gate dielectrics; Metal oxide semiconductors
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| E-Mail |
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