| 초록 |
Phase change memory (PCM) is a promising next-generation memory device along with ReRAM and MRAM. An important characteristic of the PCM is that execution-in-place operation is possible unlike conventional NAND flash memory. In other words, overwriting data is possible in the PCM without erase operation. The key reason is the threshold switching behavior of amorphous chalcogenide material. In this presentation, we will show a TCAD simulation of threshold switching in PCM cell considering known physical mechanisms. Eventually, we will construct an integrated simulation of PCM cell and ovonic threshold switch (OTS). |
