| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | G. 나노/박막 재료 |
| 제목 | Graphene Doping Method using Radicals |
| 초록 | Graphene has attracted much attention due to its remarkable mechanical and electrical properties and is being actively developed to realize its full potential. Some of its important properties are the suitability for transparent conductive films: high conductivity, high transparency, and excellent flexibility, and, because of these superior properties, graphene has been studied as a possible replacement for indium tin oxide (ITO). Its serious problems, however, have been the relatively high sheet resistance (~few hundred Ω/sq.) compared to that of ITO (a hundred Ω/sq.) at similar optical transmittance conditions and the difficulty in the scalability to large size. In regard to the latter, many approaches and progresses have been reported for the synthesis by large area chemical vapor deposition (CVD). The former, i.e., the relatively high sheet resistance, has been a bottleneck for its application to transparent conductive films. In this study, we propose a novel doping method of graphene by a cyclic trap-doping with low energy chlorine adsorption. Low energy chlorine adsorption for graphene chlorination avoided defect (D-band) formation during doping by maintaining the π-bonding of the graphene, which affects conductivity. In addition, by trapping chlorine dopants between the graphene layers, the sheet resistance could be decreased significantly at an optimized condition. |
| 저자 | 이철희1, 김태형1, 김경남1, 배정운1, 염근영2 |
| 소속 | 1성균관대, 2성균나노과학기술원 |
| 키워드 | graphene; doping |
