| 학회 |
한국고분자학회 |
| 학술대회 |
2021년 봄 (04/07 ~ 04/09, 대전컨벤션센터) |
| 권호 |
46권 1호 |
| 발표분야 |
분자전자 부문위원회 Ⅰ |
| 제목 |
All-Photopatterned, Fully Stretchable Ion Gel-Gated Transistor Array Based on Flexible Photo-Crosslinker |
| 초록 |
Skin-like electronics based on fully stretchable materials have gained much interest owing to their superior stretchability and skin conformability. However, the realization of densely integrated stretchable devices has been challenging as the rubbery nature of stretchable materials makes them incompatible with the advanced microfabrication techniques. Herein, to overcome the limitation, we present a novel method for the realization of highly patterned stretchable transistor arrays by utilizing ‘flexible photo-crosslinkers’ coupled with stretchable electronic materials. The photo-crosslinkers allowed sequential fabrication of highly integrated ion-gel gated stretchable transistor array without the deterioration of electronic properties. Furthermore, the developed stretchable transistor achieved high performance (μh＞25.8cm2/Vs) under low voltage conditions( |
| 저자 |
이채영1, 권혁민1, 이명재2, 박상준1, 조완호2, 김봉수2, 김도환1
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| 소속 |
1한양대, 2울산과학기술대 |
| 키워드 |
Stretchable Electronics; Ion Gel-Gated Transistor; Photo-Patterning
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| E-Mail |
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