| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 봄 (04/04 ~ 04/06, 대전컨벤션센터) |
| 권호 |
43권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
High Electron Mobility Thin-Film Transistors Based on Solution-Processed Metal Oxide Semiconductor and Polymer Hybrids |
| 초록 |
High mobility and flexible thin-film transistor (TFT) technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of TFTs is reported that exploits the enhanced electron transport and deformation properties of solution-processed metal oxide semiconductor and polymer hybrid layers. The hybrid layers consist of alternating layers of indium oxide (In2O3) and grafted polymer (gPOLY) grown by sequential spin casting of doped In2O3 precursor and silane-terminated polymer and annealing at temperatures (150-300 °C). Properly doped In2O3/gPOLY hybrid transistors show high electron mobilities approximately a tenfold greater than undoped In2O3 devices, as well as high deformability under an applied stress. The oxide/organic hybrid transistor concept can be seen as an extremely promising technology for application in large area flexible optoelectronics. |
| 저자 |
배명원, 양회창
|
| 소속 |
인하대 |
| 키워드 |
thin-film transistor; metal oxide semiconductor; flexible optoelectronics
|
| E-Mail |
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