| 초록 |
Chemically amplified resists comprising base resin and photoacid generator have been developed for fabrication of electronic components and integrated circuits due to the high sensitivity and resolution. A top surface imaging (TSI) approach offers a higher resolution because of the anisotropic pattern transfer of a thin imaging resist film containing silicon into the underlying polymer film. In this study, the TSI technique was combined with a new imaging process. Three layers were used in this process. The top layer contains trimethoxysilyl groups. The photo-imaging layer contains the photoacid generator. Upon exposure, the photogenerated acid induces the cross-linking reaction of the top layer. This process reduces the post-exposure delay problems. Pattern transfer was carried out through oxygen reactive ion etching from the top layer to the bottom SU-8 layer. Eventually, 0.3μm line patterns were fabricated with high aspect ratio using a contact printer. |
