| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
37권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Enhanced Performance of Field-Effect Transistors Using Conjugated Polymer/Doped Carbon Nanotube Composite |
| 초록 |
We report significantly enhanced field-effect mobility of poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs) by introducing boron-doped multi-walled carbon nanotubes (B-CNTs) as a selective conducting bridge. In this work, organic FETs comprising a P3HT/B-CNT (1.0 wt%) composite layer show high field-effect mobility of 0.05 cm2/V∙s, which is almost 20-fold greater than that of the pure P3HT FET (2.9 × 10-3 cm2/V∙s), and 4-fold greater than that of the P3HT/undoped CNT FET, respectively. The X-ray diffraction data indicates that the size of crystalline P3HT domain is gradually reduced with increasing B-CNT concentration. However, the mobility of the P3HT/B-CNT FETs continuously increases when the concentration of B-CNT reaches up to 10 wt%. This fact implies that the homogeneously dispersed B-CNTs in polymer matrix act as selective conduction bridges for hole transport between the crystalline P3HT domains. |
| 저자 |
유길호1, 이주민2, 김정환1, 김근진1, 김상욱2, 이광희1
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| 소속 |
1광주과학기술원, 2한국과학기술원 |
| 키워드 |
Carbon nanotubes; Organic field-effect transistors
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| E-Mail |
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