| 학회 | 한국화학공학회 |
| 학술대회 | 2015년 봄 (04/22 ~ 04/24, 제주 ICC) |
| 권호 | 21권 1호, p.926 |
| 발표분야 | 재료 |
| 제목 | Effects of surface texturing on germanium solar cell performance |
| 초록 | Germanium has a lower band gap compared to silicon, which enables it to absorb photons from the low energy part of the solar spectrum. In the present study, we examined the effect of surface preparation and texturing Ge wafer on the solar cell performance. We used several types of Ga-doped p-type Ge wafers with (100), (110), and (111) orientations. In order to investigate the effect of texturing on Ge surface, two types of etching/texturing have been demonstrated: H2O2:H2O and HF:H2O2:H2O. Next, the wafers were phosphorus implanted. The dopants were activated by RTA. Al was deposited for the backside contact and Ag for the front contact. Ge(111) wafers revealed an improved cell efficiency when they were texturized in HF:H2O2:H2O solution, while (110) wafers showed an improvement with the H2O2:H2O texturization. As a result, the highest efficiency of 1.9% was observed with HF:H2O2:H2O-texturized Ge(111) wafer, while non-texturized Ge(111) exhibited 1.3% of efficiency. |
| 저자 | 이승효, 임상우, 오은석, 김솔바로 |
| 소속 | 연세대 |
| 키워드 | Germanium; MACE; Solar Cell |
| 원문파일 | 초록 보기 |
