| 초록 |
The p(V4D4-co-CHMA) copolymer was developed for use as agate dielectric in molybdenum disulfide (MoS2) field-effect transistors (FETs). The p(V4D4-co-CHMA) copolymer was synthesized via the initiated chemical vapor deposition (iCVD)of two types of monomers: V4D4 and CHMA. Four vinyl groups of V4D4 monomers and cyclohexyl groups of CHMA monomers were introduced to enhance the electrical strength of gate dielectrics through the formation of a highly crosslinked network and to reduce the charge trap densities at the MoS2-dielectric interface. The resulting MoS2 FETs with p(V4D4-co-CHMA) gate dielectrics exhibited excellent electrical properties, including an electron mobility of 35.1 cm2/Vs, a subthreshold swing of 0.2 V/dec, and an Ion/off of 2.6×106. |
